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| LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23 Typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications LBSS138LT1 3 1 2 * * Miniature SOT-23 Surface Mount Package saves board space * Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish SOT- 23 (TO-236AB) 200 mAMPS 50 VOLTS R DS(on) = 3.5 W N - Channel 3 Unit Vdc Vdc mA ID IDM PD TJ, Tstg RJA TL 200 800 225 - 55 to 150 556 260 mW C C/W C J1 W 1 2 1 MAXIMUM RATINGS (TA = 25 o C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS Value 50 20 2 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 Gate Source J1 = Device Code W = Work Week ORDERING INFORMATION Device LBSS138LT1 LBSS138LT1G Package SOT-23 SOT-23 Shipping 3000 Tape & Reel 3000 Tape & Reel LBSS138LT1-1/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate-Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-to-Source On-Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = -40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss - - - 40 12 3.5 50 25 5.0 pF VGS(th) rDS(on) - - gfs 100 5.6 - - 10 3.5 - mmhos 0.5 - 1.5 Vdc Ohms V(BR)DSS IDSS - - IGSS - - - - 0.1 0.5 0.1 Adc 50 - - Vdc Adc Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Turn-Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. td(on) td(off) - - - - 20 20 ns LBSS138LT1-2/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 TYPICAL ELECTRICAL CHARACTERISTICS 0.8 I D , DRAIN CURRENT (AMPS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 0.9 0.8 I D , DRAIN CURRENT (AMPS) VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 TJ = 25C VGS = 3.5 V VDS = 10 V -55C 25C 150C VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -55 -5 45 95 145 0.75 -55 -30 VGS = 4.5 V ID = 0.5 A VGS = 10 V ID = 0.8 A 1.25 Figure 2. Transfer Characteristics RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 1.0 mA Vgs(th) , VARIANCE (VOLTS) 1.125 1 0.875 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 8 6 4 ID = 200 mA 2 0 VDS = 40 V TJ = 25C Figure 4. Threshold Voltage Variation with Temperature 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge LBSS138LT1-3/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 TYPICAL ELECTRICAL CHARACTERISTICS RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 10 9 8 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 -55C 25C 8 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 25C -55C 0.25 VGS = 2.5 V 150C VGS = 2.75 V 150C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 6. On-Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 -55C 25C 4.5 4 3.5 3 2.5 2 1.5 1 Figure 7. On-Resistance versus Drain Current VGS = 4.5 V 150C VGS = 10 V 150C 25C -55C 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 8. On-Resistance versus Drain Current Figure 9. On-Resistance versus Drain Current 1 I D , DIODE CURRENT (AMPS) 120 100 0.1 TJ = 150C 25C -55C 80 60 0.01 40 20 Ciss Coss Crss 0 5 10 15 20 25 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 10. Body Diode Forward Voltage Figure 11. Capacitance LBSS138LT1-4/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1 SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBSS138LT1-5/5 |
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